DEEP TRENCH ISOLATION STRUCTURE FOR IMAGE SENSOR

An image sensor device is disclosed. The image sensor device includes a substrate having a plurality of pixel regions. Two adjacent pixel regions are optically isolated by an isolation structure. In an embodiment, a method of forming the isolation structure includes receiving a workpiece having a fi...

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Main Authors Chen, Gang, Pang, Chin Poh
Format Patent
LanguageEnglish
Published 23.03.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Abstract An image sensor device is disclosed. The image sensor device includes a substrate having a plurality of pixel regions. Two adjacent pixel regions are optically isolated by an isolation structure. In an embodiment, a method of forming the isolation structure includes receiving a workpiece having a first substrate, etching a frontside of the first substrate to form a first trench, depositing a fill layer in the first trench, removing a portion of the fill layer from the backside of the first substrate to form a second trench surrounded by the fill layer, and depositing a metal layer in the second trench to form the isolation structure.
AbstractList An image sensor device is disclosed. The image sensor device includes a substrate having a plurality of pixel regions. Two adjacent pixel regions are optically isolated by an isolation structure. In an embodiment, a method of forming the isolation structure includes receiving a workpiece having a first substrate, etching a frontside of the first substrate to form a first trench, depositing a fill layer in the first trench, removing a portion of the fill layer from the backside of the first substrate to form a second trench surrounded by the fill layer, and depositing a metal layer in the second trench to form the isolation structure.
Author Chen, Gang
Pang, Chin Poh
Author_xml – fullname: Chen, Gang
– fullname: Pang, Chin Poh
BookMark eNrjYmDJy89L5WQwcHF1DVAICXL1c_ZQ8Az293EM8fT3UwgOCQp1DgkNclVw8w9S8PR1dHdVCHb1C_YP4mFgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8aHBRgZGxgYWlqaGho6GxsSpAgDQNSkQ
ContentType Patent
DBID EVB
DatabaseName esp@cenet
DatabaseTitleList
Database_xml – sequence: 1
  dbid: EVB
  name: esp@cenet
  url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP
  sourceTypes: Open Access Repository
DeliveryMethod fulltext_linktorsrc
Discipline Medicine
Chemistry
Sciences
ExternalDocumentID US2023089511A1
GroupedDBID EVB
ID FETCH-epo_espacenet_US2023089511A13
IEDL.DBID EVB
IngestDate Fri Jul 19 12:48:33 EDT 2024
IsOpenAccess true
IsPeerReviewed false
IsScholarly false
Language English
LinkModel DirectLink
MergedId FETCHMERGED-epo_espacenet_US2023089511A13
Notes Application Number: US202117478556
OpenAccessLink https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230323&DB=EPODOC&CC=US&NR=2023089511A1
ParticipantIDs epo_espacenet_US2023089511A1
PublicationCentury 2000
PublicationDate 20230323
PublicationDateYYYYMMDD 2023-03-23
PublicationDate_xml – month: 03
  year: 2023
  text: 20230323
  day: 23
PublicationDecade 2020
PublicationYear 2023
RelatedCompanies MAGVISION SEMICONDUCTOR (BEIJING) INC
RelatedCompanies_xml – name: MAGVISION SEMICONDUCTOR (BEIJING) INC
Score 3.4647908
Snippet An image sensor device is disclosed. The image sensor device includes a substrate having a plurality of pixel regions. Two adjacent pixel regions are optically...
SourceID epo
SourceType Open Access Repository
SubjectTerms BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Title DEEP TRENCH ISOLATION STRUCTURE FOR IMAGE SENSOR
URI https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230323&DB=EPODOC&locale=&CC=US&NR=2023089511A1
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1LS8NAEB5KFfWmVfFRZUHJLZhmk6aXIO1mYyrmQR7SW0nSPRQkLTbi33c2ptpTL8s-YPYBs_PN7MwswKNlFQWKDqEaAw2L0qBqXhq6OhQjU8tLvRBC2iH9YOhlxuvMnHXgYxsL0-QJ_W6SIyJHlcjvdXNfr_-NWE7jW7l5KpbYtXp2U9tRWu0Y8TTVqeJMbB6FTsgUxuwsUYL4d2yEcGIwRl3pQAJpmWmfv09kXMp6V6i4p3AYIb2qPoOOqHpwzLZ_r_XgyG-fvLHact_mHDSH84ikMQ-YR6ZJ-NbYl0iSxhmT3gsENToy9ccvnCQ8SML4Ah5cnjJPxannfzudZ8nuOukldKtVJa6AWAi0ZExsvqDUQKbMRWEuLARfCNjoILeuob-P0s3-4Vs4kU3pWqXTPnTrzy9xh7K2Lu6bI_oBQ7Z8Dg
link.rule.ids 230,309,786,891,25594,76903
linkProvider European Patent Office
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3dS8MwED_GFOebTsXp1IDSt-LWtOtehmxpaqf9oh-yt9F2eRCkG67iv-81brqnvYSQg3zB5X6_y10C8GCaeY6mQ6h6v4dFoVM1K3RNHYih0csKLRei9kN6_sBJ9ZeZMWvAxzYXRr4T-i0fR0SNKlDfK3ler_6dWJaMrVw_5u_YtHyyk5GlbNgx4mmqUcWajHgYWAFTGBulseJHv7Ihwon-GLnSgYmkUJKlt0mdl7LaNSr2CRyG2F9ZnUJDlG1ose3fa2048jZX3ljdaN_6DHoW5yFJIu4zh0zjwJX-JRInUcrq6AWCjI5MvfEzJzH34yA6h3ubJ8xRcej530rnabw7T3oBzXJZiksgJgKtOic2W1Cqo1JmIjcWJoIvBGy0n5kd6O7r6Wq_-A5aTuK5c3fqv17DcS2qw6w02oVm9fklbtDuVvmt3K4fNaB--A
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=DEEP+TRENCH+ISOLATION+STRUCTURE+FOR+IMAGE+SENSOR&rft.inventor=Chen%2C+Gang&rft.inventor=Pang%2C+Chin+Poh&rft.date=2023-03-23&rft.externalDBID=A1&rft.externalDocID=US2023089511A1