DEEP TRENCH ISOLATION STRUCTURE FOR IMAGE SENSOR

An image sensor device is disclosed. The image sensor device includes a substrate having a plurality of pixel regions. Two adjacent pixel regions are optically isolated by an isolation structure. In an embodiment, a method of forming the isolation structure includes receiving a workpiece having a fi...

Full description

Saved in:
Bibliographic Details
Main Authors Chen, Gang, Pang, Chin Poh
Format Patent
LanguageEnglish
Published 23.03.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:An image sensor device is disclosed. The image sensor device includes a substrate having a plurality of pixel regions. Two adjacent pixel regions are optically isolated by an isolation structure. In an embodiment, a method of forming the isolation structure includes receiving a workpiece having a first substrate, etching a frontside of the first substrate to form a first trench, depositing a fill layer in the first trench, removing a portion of the fill layer from the backside of the first substrate to form a second trench surrounded by the fill layer, and depositing a metal layer in the second trench to form the isolation structure.
Bibliography:Application Number: US202117478556