POWER SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING POWER SEMICONDUCTOR DEVICE

A power semiconductor device includes a semiconductor body and a first terminal at the semiconductor body. The first terminal has a first side for adjoining an encapsulation and a second side for adjoining the semiconductor body. The first terminal includes, at the first side, a top layer; and, at t...

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Main Authors ROTH, Roman, HIRSCHLER, Joachim, HILSENBECK, Jochen, SCHLAMINGER, Johanna, SAENGER, Annette, SOELLRADL, Thomas, FASTNER, Ulrike, BEHRENDT, Andreas
Format Patent
LanguageEnglish
Published 16.03.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A power semiconductor device includes a semiconductor body and a first terminal at the semiconductor body. The first terminal has a first side for adjoining an encapsulation and a second side for adjoining the semiconductor body. The first terminal includes, at the first side, a top layer; and, at the second side, a base layer coupled with the top layer, wherein a sidewall of the top layer and/or a sidewall of the base layer is arranged in an angle smaller than 85° with respect to a plane.
Bibliography:Application Number: US202217945494