SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, INVERTER CIRCUIT, DRIVE DEVICE, VEHICLE, AND ELEVATOR

A semiconductor device of embodiments includes: a silicon carbide layer including a trench, a n-type first SiC region, a p-type second SiC region on the first SiC region, a n-type third SiC region on the second SiC region, a fourth SiC region of p-type between the first trench and the first SiC regi...

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Bibliographic Details
Main Authors KIMOTO, Shinichi, IIJIMA, Ryosuke, HARADA, Shinsuke
Format Patent
LanguageEnglish
Published 16.03.2023
Subjects
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