INTEGRATED CIRCUIT DEVICES INCLUDING A VIA AND METHODS OF FORMING THE SAME

Integrated circuit devices including a via and methods of forming the same are provided. The methods may include forming a conductive wire structure on a substrate. The conductive wire structure may include a first insulating layer and a conductive wire stack in the first insulating layer, and the c...

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Bibliographic Details
Main Authors NAM, SEOWOO, HE, MING, AHN, SANG HOON, SIMKA, HARSONO, LEE, ANTHONY DONGICK
Format Patent
LanguageEnglish
Published 09.03.2023
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Summary:Integrated circuit devices including a via and methods of forming the same are provided. The methods may include forming a conductive wire structure on a substrate. The conductive wire structure may include a first insulating layer and a conductive wire stack in the first insulating layer, and the conductive wire stack may include a conductive wire and a mask layer stacked on the substrate. The method may also include forming a recess in the first insulating layer by removing the mask layer, the recess exposing the conductive wire, forming an etch stop layer and then a second insulating layer on the first insulating layer and in the recess of the first insulating layer, and forming a conductive via extending through the second insulating layer and the etch stop layer and contacting the conductive wire.
Bibliography:Application Number: US202117546470