LOW COST EMBEDDED INTEGRATED CIRCUIT DIES

An example microelectronic assembly comprises a support structure; an interposer above the support structure; a first die in the interposer, the first die including through-substrate vias (TSVs); and a second die in the interposer, the second die lacking TSVs. A die-to-package support (DTPS) interco...

Full description

Saved in:
Bibliographic Details
Main Authors Brun, Xavier Francois, Ganesan, Sanka
Format Patent
LanguageEnglish
Published 09.03.2023
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:An example microelectronic assembly comprises a support structure; an interposer above the support structure; a first die in the interposer, the first die including through-substrate vias (TSVs); and a second die in the interposer, the second die lacking TSVs. A die-to-package support (DTPS) interconnect field on a first face of the first die is substantially identical to a DTPS interconnect field on a first face of the second die, the DTP interconnect fields comprising a plurality of DTPS interconnects for connecting the first and second dies to the support structure. A die-to-die (DTD) interconnect field on a second face of the first die is substantially identical to a DTD interconnect field on a second face of the second die, the DTD interconnect fields comprising a plurality of DTD interconnects.
Bibliography:Application Number: US202117467666