MAGNETIC MEMORY DEVICE

A magnetic memory device may include a pinned magnetic pattern and a free magnetic pattern which are stacked on a substrate, a tunnel barrier pattern between the pinned magnetic pattern and the free magnetic pattern, a capping pattern on the free magnetic pattern, and a non-magnetic pattern between...

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Bibliographic Details
Main Authors KIM, Whankyun, NOH, Eunsun, SHIN, Heeju, JEONG, Junho, LEE, Joonmyoung
Format Patent
LanguageEnglish
Published 09.03.2023
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Summary:A magnetic memory device may include a pinned magnetic pattern and a free magnetic pattern which are stacked on a substrate, a tunnel barrier pattern between the pinned magnetic pattern and the free magnetic pattern, a capping pattern on the free magnetic pattern, and a non-magnetic pattern between the free magnetic pattern and the capping pattern. The free magnetic pattern may be between the tunnel barrier pattern and the capping pattern. The non-magnetic pattern may include a first non-magnetic metal and boron, and the capping pattern includes a second non-magnetic metal. A boride formation energy of the second non-magnetic metal may be higher than a boride formation energy of the first non-magnetic metal.
Bibliography:Application Number: US202217726056