MAGNETORESISTANCE MEMORY DEVICE

A magnetoresistance memory device includes first, second, third and fourth ferromagnetic layers; a first and second ferromagnetic oxide layers; a metal layer; an insulating layer. The second ferromagnetic layer includes one of iron and cobalt included in the first ferromagnetic oxide layer and one e...

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Bibliographic Details
Main Authors EEH, Young Min, ISODA, Taiga, KITAGAWA, Eiji, SAWADA, Kazuya, OIKAWA, Tadaaki
Format Patent
LanguageEnglish
Published 09.03.2023
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Summary:A magnetoresistance memory device includes first, second, third and fourth ferromagnetic layers; a first and second ferromagnetic oxide layers; a metal layer; an insulating layer. The second ferromagnetic layer includes one of iron and cobalt included in the first ferromagnetic oxide layer and one element of a first element group. The second ferromagnetic oxide layer includes an oxide of an alloy of the one of iron and cobalt included in the second ferromagnetic oxide layer with a first element, which has a standard electrode potential lower than that of iron or cobalt and that of the one element of the first element group included in the second ferromagnetic layer.
Bibliography:Application Number: US202117549248