MAGNETORESISTANCE MEMORY DEVICE
A magnetoresistance memory device includes first, second, third and fourth ferromagnetic layers; a first and second ferromagnetic oxide layers; a metal layer; an insulating layer. The second ferromagnetic layer includes one of iron and cobalt included in the first ferromagnetic oxide layer and one e...
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Main Authors | , , , , |
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Format | Patent |
Language | English |
Published |
09.03.2023
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Online Access | Get full text |
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Summary: | A magnetoresistance memory device includes first, second, third and fourth ferromagnetic layers; a first and second ferromagnetic oxide layers; a metal layer; an insulating layer. The second ferromagnetic layer includes one of iron and cobalt included in the first ferromagnetic oxide layer and one element of a first element group. The second ferromagnetic oxide layer includes an oxide of an alloy of the one of iron and cobalt included in the second ferromagnetic oxide layer with a first element, which has a standard electrode potential lower than that of iron or cobalt and that of the one element of the first element group included in the second ferromagnetic layer. |
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Bibliography: | Application Number: US202117549248 |