SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD USING THE SAME

• Main Authors: KANG, Sunggil, KIM, Minhyoung, KIM, Inseong, CHOI, Kyusik, LEE, Woorim, AN, Sangjin, PARK, Seokyoung, JEONG, Inhye
• Format: Patent
• Language: English
• Published: 09.03.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A substrate processing apparatus includes first to fourth sets of inner surfaces that at least partially define a plasma forming region, a gas supply region, gas mixing region, and a substrate processing region, respectively, where the substrate processing apparatus is configured to form a plasma within the plasma forming region, supply a process gas from the gas supply region to the plasma forming region, form an etchant in the gas mixing region based on recombination of radicals supplied from the plasma forming region, and process a substrate based on the etchant within the substrate processing region; a shower head between the gas mixing region and the substrate processing region and configured to supply the etchant to the substrate processing region; a coating layer covering a surface of the shower head and including nickel (Ni) containing phosphorus (P); and a heater configured to control a surface temperature of the shower head.