MAGNETORESISTIVE RANDOM ACCESS MEMORY
A semiconductor device includes a substrate having a magnetic tunneling junction (MTJ) region and a logic region, a magnetic tunneling junction (MTJ) on the MTJ region and a first metal interconnection on the MTJ. Preferably, a top view of the MTJ includes a circle and a top view of the first metal...
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Main Authors | , , , , |
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Format | Patent |
Language | English |
Published |
09.03.2023
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Subjects | |
Online Access | Get full text |
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Summary: | A semiconductor device includes a substrate having a magnetic tunneling junction (MTJ) region and a logic region, a magnetic tunneling junction (MTJ) on the MTJ region and a first metal interconnection on the MTJ. Preferably, a top view of the MTJ includes a circle and a top view of the first metal interconnection includes an ellipse overlapping the circle. |
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Bibliography: | Application Number: US202217987795 |