MAGNETORESISTIVE RANDOM ACCESS MEMORY

A semiconductor device includes a substrate having a magnetic tunneling junction (MTJ) region and a logic region, a magnetic tunneling junction (MTJ) on the MTJ region and a first metal interconnection on the MTJ. Preferably, a top view of the MTJ includes a circle and a top view of the first metal...

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Bibliographic Details
Main Authors Huang, Ting-Hsiang, Lee, Kuo-Hsing, Hsueh, Sheng-Yuan, Sheng, Yi-Chung, Kang, Chih-Kai
Format Patent
LanguageEnglish
Published 09.03.2023
Subjects
ELECTRICITY
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Summary:A semiconductor device includes a substrate having a magnetic tunneling junction (MTJ) region and a logic region, a magnetic tunneling junction (MTJ) on the MTJ region and a first metal interconnection on the MTJ. Preferably, a top view of the MTJ includes a circle and a top view of the first metal interconnection includes an ellipse overlapping the circle.
Bibliography:Application Number: US202217987795