DIODE STRUCTURES WITH ONE OR MORE RAISED TERMINALS

Structures for a diode and methods of fabricating a structure for a diode. The structure includes a layer comprised of a semiconductor material. The layer includes a first section, a second section, and a third section laterally positioned between the first section and the second section. The struct...

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Bibliographic Details
Main Authors Jain, Vibhor, Holt, Judson R
Format Patent
LanguageEnglish
Published 02.03.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Structures for a diode and methods of fabricating a structure for a diode. The structure includes a layer comprised of a semiconductor material. The layer includes a first section, a second section, and a third section laterally positioned between the first section and the second section. The structure includes a first terminal having a raised semiconductor layer on the first section of the layer, a second terminal including a portion on the second section of the layer, and a gate on the third section of the layer.
Bibliography:Application Number: US202117540339