GATE TIE STRUCTURES TO BURIED OR BACKSIDE POWER RAILS

• Main Author: Wei, Andy Chih-Hung
• Format: Patent
• Language: English
• Published: 02.03.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Techniques are provided herein to form semiconductor devices having gate tie-down structures between the device gate and a buried/backside power rail (BPR). In an example, a semiconductor device includes a conductive material that is part of a transistor gate structure on a semiconductor region. The semiconductor region can be, for example, a fin or a set of one or more nanowires or nanoribbons that extends between a source region and a drain region. A BPR structure is beneath a dielectric layer that is between the BPR structure and the conductive material of the gate structure. A portion of the conductive material also extends through the dielectric material to provide a conductive via between the gate structure and the underlying BPR structure. The conductive material may be, for example, work function and/or metal fill material of the gate electrode of the gate structure.