DIFFERENTIALLY PROGRAMMABLE MAGNETIC TUNNEL JUNCTION DEVICE AND SYSTEM INCLUDING SAME

A memory device, an integrated circuit component including an array of the memory devices, and an integrated device assembly including the integrated circuit component. The memory devices includes a first electrode; a second electrode including an antiferromagnetic (AFM) material; and a memory stack...

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Bibliographic Details
Main Authors Lin, Chia-Ching, Gosavi, Tanay A, Debashis, Punyashloka, Young, Ian Alexander, Nikonov, Dmitri Evgenievich, Penumatcha, Ashish Verma, Oguz, Kaan
Format Patent
LanguageEnglish
Published 02.03.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRICITY
INDUCTANCES
INFORMATION STORAGE
MAGNETS
PHYSICS
SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
STATIC STORES
TRANSFORMERS
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Summary:A memory device, an integrated circuit component including an array of the memory devices, and an integrated device assembly including the integrated circuit component. The memory devices includes a first electrode; a second electrode including an antiferromagnetic (AFM) material; and a memory stack including: a first layer adjacent the second electrode and including a multilayer stack of adjacent layers comprising ferromagnetic materials; a second layer adjacent the first layer; and a third layer adjacent the second layer at one side thereof, and adjacent the first electrode at another side thereof, the second layer between the first layer and the third layer, the third layer including a ferromagnetic material. The memory device may correspond to a magnetic tunnel junction (MTJ) magnetic random access memory bit cell, and the memory stack may correspond to a MTJ device.
Bibliography:Application Number: US202117465752