EPITAXIAL WAFER, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING EPITAXIAL WAFER

• Main Author: ERA, Atsushi
• Format: Patent
• Language: English
• Published: 23.02.2023
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

An epitaxial wafer according to the present disclosure includes: a substrate; a buffer layer formed of a crystal having the composition formula represented by AlxGayInzN (x+y+z=1, y>0) on the substrate; a back-barrier layer formed of a crystal having the composition formula represented by AlxGayInzN (x+y+z=1, y>0, z>0) on the buffer layer; a channel layer formed of a crystal having the composition formula represented by AlxGayInzN (x+y+z=1, y>0) on the back-barrier layer; and an electron-supply layer formed of a crystal having the composition formula represented by AlxGayInzN (x+y+z=1, x>0) on the channel layer. The channel layer is constituted with an upper channel layer underneath the electron-supply layer and a lower channel layer on the back-barrier layer, and the lower channel layer has a C concentration higher than the upper channel layer and contains Si.