BI-POLAR BORDER REGION IN PIEZOELECTRIC DEVICE

An acoustic device includes a foundation structure and a transducer provided over the foundation structure. The foundation structure includes a piezoelectric layer between a top electrode and a bottom electrode. The piezoelectric layer has an active portion within an active region of the transducer,...

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Bibliographic Details
Main Authors Rothemund, Ralph, Tajic, Alireza, Sadhu, Jyothi Swaroop
Format Patent
LanguageEnglish
Published 02.02.2023
Subjects
BASIC ELECTRONIC CIRCUITRY
ELECTRICITY
IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS
RESONATORS
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Summary:An acoustic device includes a foundation structure and a transducer provided over the foundation structure. The foundation structure includes a piezoelectric layer between a top electrode and a bottom electrode. The piezoelectric layer has an active portion within an active region of the transducer, and a bi-polar border portion within a border region of the transducer. The piezoelectric material in the active portion has a first polarization. The bi-polar border portion has a first sub-portion and a second sub-portion, which resides either above or below the first sub-portion. The piezoelectric material in the first sub-portion has the first polarization, and the piezoelectric material in the second sub-portion has a second polarization, which is opposite the first polarization.
Bibliography:Application Number: US202217933958