APPARATUS AND METHOD FOR TERAHERTZ-BASED READING OF DATA RECORDED INTO RUDERMAN-KITTEL-KASUYA-YOSIDA (RKKY)-BASED MAGNETIC MEMORY WITHOUT DISSIPATION OF ENERGY IN THE MEDIUM

The apparatus and the method for terahertz-based reading of data recorded in the Ruderman-Kittel-Kasuya-Yosida (RKKY)-based magnetic memory provided. The apparatus comprises: a Terahertz Magnon Laser configured to generate THz magnons; wherein the Terahertz Magnon Laser further comprises a Magnon Ga...

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Bibliographic Details
Main Author Tankhilevich, Boris G
Format Patent
LanguageEnglish
Published 12.01.2023
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Summary:The apparatus and the method for terahertz-based reading of data recorded in the Ruderman-Kittel-Kasuya-Yosida (RKKY)-based magnetic memory provided. The apparatus comprises: a Terahertz Magnon Laser configured to generate THz magnons; wherein the Terahertz Magnon Laser further comprises a Magnon Gain Medium (MGM) configured to support generation of non-equilibrium Terahertz magnons after the electric current is applied across the Terahertz Magnon Laser. The apparatus further comprises a magnetic reading bridge coupled to the Magnon Gain Medium of the Terahertz Magnon Laser; the magnetic reading bridge also coupled to a Ruderman-Kittel-Kasuya-Yosida (RKKY)-based magnetic memory cell; wherein magnetization of the magnetic reading bridge is induced by the overall magnetization of the RKKY)-based magnetic memory cell, and wherein the overall magnetization of the RKKY)-based magnetic memory cell is dependent on the information bit encoded into the magnetic memory cell, and wherein the encoded bit '1' corresponds to the higher overall magnetization of the memory cell, and wherein the encoded bit '0' corresponds to the lower overall magnetization of the memory cell. The apparatus further comprises a terahertz demodulator configured to demodulate the generated THz reading signal; wherein the higher detected THz frequency corresponds to reading bit '1' encoded into the RKKY-based magnetic memory cell; and wherein the lower detected THz frequency corresponds to reading bit '0' encoded into the RKKY-based magnetic memory cell.
Bibliography:Application Number: US202217853059