SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

• Main Author: LEE, Tzung-Han
• Format: Patent
• Language: English
• Published: 12.01.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The present disclosure relates to a semiconductor structure and a manufacturing method thereof. The method includes providing a substrate, where the substrate includes a device region and a peripheral region; and forming a bit line structure in the device region, and forming a transistor structure in the peripheral region, where the transistor structure includes a gate structure, and the bit line structure includes a bit line conductive layer and a bit line protective layer; the gate structure includes a gate oxide layer, a high-k dielectric layer, a gate conductive layer and a gate protective layer; the gate conductive layer and the bit line conductive layer are obtained by patterning a same conductive material layer, and the bit line protective layer and the gate protective layer are obtained by patterning a same protective material layer.