METHOD FOR INHIBITING TIN WHISKER GROWTH

A uniform copper-tin compound layer is electrochemically deposited on a surface of a copper-based base structure. A tin-based film is then formed on the copper-tin compound layer. The uniform copper-tin compound layer provides a barrier that effectively inhibits tin whisker growth.

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Bibliographic Details
Main Author CREMA, Paolo
Format Patent
LanguageEnglish
Published 05.01.2023
Subjects
ALLOYS
APPARATUS THEREFOR
CHEMISTRY
ELECTROFORMING
ELECTROLYTIC OR ELECTROPHORETIC PROCESSES
FERROUS OR NON-FERROUS ALLOYS
METALLURGY
PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS
TREATMENT OF ALLOYS OR NON-FERROUS METALS
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Summary:A uniform copper-tin compound layer is electrochemically deposited on a surface of a copper-based base structure. A tin-based film is then formed on the copper-tin compound layer. The uniform copper-tin compound layer provides a barrier that effectively inhibits tin whisker growth.
Bibliography:Application Number: US202117363205