CHEMICAL VAPOR DEPOSPITION FURNACE FOR DEPOSITING FILMS
A chemical vapor deposition furnace for depositing silicon nitride films, is discloses. The furnace comprising a process chamber elongated in a substantially vertical direction and a wafer boat for supporting a plurality of wafers in the process chamber. A process gas injector is provided inside the...
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Main Authors | , , , , , , , , |
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Format | Patent |
Language | English |
Published |
05.01.2023
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Subjects | |
Online Access | Get full text |
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Summary: | A chemical vapor deposition furnace for depositing silicon nitride films, is discloses. The furnace comprising a process chamber elongated in a substantially vertical direction and a wafer boat for supporting a plurality of wafers in the process chamber. A process gas injector is provided inside the process chamber extending in a substantially vertical direction over substantially a wafer boat height and comprising a feed end connected to a source of a silicon precursor and a source of a nitrogen precursor and a plurality of vertically spaced gas injection holes to provide gas from the feed end to the process chamber. The furnace may comprise a purge gas injection system to provide a purge gas into the process chamber near a lower end of the process chamber. |
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Bibliography: | Application Number: US202217850141 |