METAL LINE PROFILE SHAPING FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION

Embodiments of the disclosure are in the field of integrated circuit structure fabrication. In an example, an integrated circuit structure includes a dielectric material structure having a trench therein. A conductive interconnect line in the trench, the conductive interconnect line having a length...

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Bibliographic Details
Main Authors HASAN, Mohammad, CHANG, Tsuan-Chung, JOACHIM, Robert, WALLACE, Charles H, TEWELDEBRHAN, Desalegne B, GULER, Leonard P, MAKOWSKI, Michael James, KRIEGEL, Benjamin, GHANI, Tahir
Format Patent
LanguageEnglish
Published 29.12.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Embodiments of the disclosure are in the field of integrated circuit structure fabrication. In an example, an integrated circuit structure includes a dielectric material structure having a trench therein. A conductive interconnect line in the trench, the conductive interconnect line having a length and a width, the width having a cross-sectional profile, wherein the cross-sectional profile of the width of the conductive interconnect line has a bottom lateral width, a mid-height lateral width, and a top lateral width, and wherein the mid-height lateral width is greater than the bottom lateral width, and the mid-height lateral width is greater than the top lateral width.
Bibliography:Application Number: US202117357773