STACKED FET WITH DIFFERENT CHANNEL MATERIALS

A semiconductor device comprising at least one first gate all around channel having a horizontal physical orientation, wherein the at least one first gate all around channel is comprised of a first material, wherein the at least one first gate all around channel has a sidewall surface with (100) cry...

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Main Authors Shearer, Jeffrey C, Suk, Sung Dae, Miller, Eric, Wang, Junli, Xie, Ruilong, Basker, Veeraraghavan S, Guo, Dechao, Fan, Su Chen, Frougier, Julien
Format Patent
LanguageEnglish
Published 22.12.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device comprising at least one first gate all around channel having a horizontal physical orientation, wherein the at least one first gate all around channel is comprised of a first material, wherein the at least one first gate all around channel has a sidewall surface with (100) crystal orientation. At least one second gate all around channel having a vertical physical orientation, wherein the second channel is located above the at least one first gate all around channel, wherein the at least one second gate all around channel is comprised of a second material, wherein the at least one second gate all around channel has a sidewall surface with (110) crystal orientation. A gate metal enclosing the at least one first gate all around channel and the at least one second gate all around channel.
Bibliography:Application Number: US202117304392