GATE ALIGNED FIN CUT FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION

Gate aligned fin cut for advanced integrated circuit structure fabrication is described. For example, an integrated circuit structure includes a first fin segment having a fin end, and a second fin segment spaced apart from the first fin segment, the second fin segment having a fin end facing the fi...

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Bibliographic Details
Main Authors HASAN, Mohammad, WALLACE, Charles H, PURSEL, Sean, CHANG, Tsuan-Chung, GUHA, Biswajeet, HSU, William, GULER, Leonard P, GHANI, Tahir
Format Patent
LanguageEnglish
Published 08.12.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Gate aligned fin cut for advanced integrated circuit structure fabrication is described. For example, an integrated circuit structure includes a first fin segment having a fin end, and a second fin segment spaced apart from the first fin segment, the second fin segment having a fin end facing the fin end of the first fin segment. A first gate structure is over the first fin segment, the first gate structure substantially vertically aligned with the fin end of the first fin segment. A second gate structure is over the second fin segment, the second gate structure substantially vertically aligned with the fin end of the second fin segment. An isolation structure is laterally between the fin end of the first fin segment and the fin end of the second fin segment.
Bibliography:Application Number: US202117339160