METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE

In a method of manufacturing a semiconductor device, a fin structure having a channel region protruding from an isolation insulating layer disposed over a semiconductor substrate is formed, a cleaning operation is performed, and an epitaxial semiconductor layer is formed over the channel region. The...

Full description

Saved in:
Bibliographic Details
Main Authors CHEN, Hung-Yao, PAN, Zheng-Yang, TAN, Lun-Kuang, CHAU, Cheng-Po, CHIU, Ya-Wen, LI, Yi-Cheng, LIANG, Pin-Ju, YU, De-Wei, CHAN, Yi Che
Format Patent
LanguageEnglish
Published 24.11.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:In a method of manufacturing a semiconductor device, a fin structure having a channel region protruding from an isolation insulating layer disposed over a semiconductor substrate is formed, a cleaning operation is performed, and an epitaxial semiconductor layer is formed over the channel region. The cleaning operation and the forming the epitaxial semiconductor layer are performed in a same chamber without breaking vacuum.
Bibliography:Application Number: US202217875279