GAS FLOW CONTROL DURING SEMICONDUCTOR FABRICATION
A method is provided. The method includes introducing a process gas into an interior space of a processing chamber through a gas inlet port, wherein a substrate is supported within the interior space. The process gas is evacuated from the interior space by a vacuum source through an exhaust port in...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
24.11.2022
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Subjects | |
Online Access | Get full text |
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Summary: | A method is provided. The method includes introducing a process gas into an interior space of a processing chamber through a gas inlet port, wherein a substrate is supported within the interior space. The process gas is evacuated from the interior space by a vacuum source through an exhaust port in fluid communication with the interior space of the process chamber. A flow of the process gas is controlled by supporting an exhaust baffle within a flow path of the process gas being evacuated from the interior space through the exhaust port. |
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Bibliography: | Application Number: US202217876845 |