MAGNETIC MEMORY BASED ON TUNABLE RUDERMAN-KITTEL-KASUYA-YOSIDA (RKKY) INTERACTION

A memory cell comprising a first layer of magnetic metal; a Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction spacer coupled to the first layer of magnetic metal; and a second layer of magnetic layer coupled to the RKKY spacer. The effective thickness of the RKKY spacer is changed by applied terahert...

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Bibliographic Details
Main Author Tankhilevich, Boris G
Format Patent
LanguageEnglish
Published 24.11.2022
Subjects
ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:A memory cell comprising a first layer of magnetic metal; a Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction spacer coupled to the first layer of magnetic metal; and a second layer of magnetic layer coupled to the RKKY spacer. The effective thickness of the RKKY spacer is changed by applied terahertz radiation resiling in changing the sign of RKKY interaction from a first sign of RKKY interaction to a second sign of RKKY interaction; thus, enabling an RKKY-tunable magnetic memory cell; wherein the first state of the memory corresponds to the first sign of RKKY interaction, and wherein the second state of the memory corresponds to the second sign of RKKY interaction.
Bibliography:Application Number: US202217881440