SEMICONDUCTOR IC DEVICE AND METHOD OF MANUFACTURING THE SAME

A semiconductor integrated circuit device includes: a channel layer, a barrier layer; a first p-type semiconductor layer and a second p-type semiconductor layer, spaced apart from each other on the barrier layer; and a passivation layer on the first p-type semiconductor layer and the second p-type s...

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Bibliographic Details
Main Authors PARK, Junhyuk, PARK, Younghwan, KIM, Joonyong, HWANG, Injun, KIM, Jongseob, OH, Jaejoon, HWANG, Sunkyu
Format Patent
LanguageEnglish
Published 17.11.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor integrated circuit device includes: a channel layer, a barrier layer; a first p-type semiconductor layer and a second p-type semiconductor layer, spaced apart from each other on the barrier layer; and a passivation layer on the first p-type semiconductor layer and the second p-type semiconductor layer. The passivation layer may partially inactivate a dopant of at least one of the first p-type semiconductor layer and the second p-type semiconductor layer.
Bibliography:Application Number: US202117465212