SEMICONDUCTOR STRUCTURE

A semiconductor structure is provided. The semiconductor structure includes a first semiconductor device. The semiconductor structure includes a first semiconductor device and a second semiconductor device. The first semiconductor device includes a first oxide layer formed below the a first substrat...

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Main Authors WEI, Chia-Yu, HUANG, Hsun-Ying, LI, Cheng-Yuan, CHEN, Hsin-Chi, LEE, Kuo-Cheng, LIN, Yen-Liang
Format Patent
LanguageEnglish
Published 17.11.2022
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Abstract A semiconductor structure is provided. The semiconductor structure includes a first semiconductor device. The semiconductor structure includes a first semiconductor device and a second semiconductor device. The first semiconductor device includes a first oxide layer formed below the a first substrate, a first bonding layer formed below the first oxide layer, and a first bonding via formed through the first bonding layer and the first oxide layer. The second semiconductor device includes a second oxide layer formed over a second substrate, a second bonding layer formed over the second oxide layer, and a second bonding via formed through the second bonding layer and the second oxide layer. The semiconductor structure also includes a bonding structure between the first substrate and the second substrate, and the bonding structure includes the first bonding via bonded to the second bonding via.
AbstractList A semiconductor structure is provided. The semiconductor structure includes a first semiconductor device. The semiconductor structure includes a first semiconductor device and a second semiconductor device. The first semiconductor device includes a first oxide layer formed below the a first substrate, a first bonding layer formed below the first oxide layer, and a first bonding via formed through the first bonding layer and the first oxide layer. The second semiconductor device includes a second oxide layer formed over a second substrate, a second bonding layer formed over the second oxide layer, and a second bonding via formed through the second bonding layer and the second oxide layer. The semiconductor structure also includes a bonding structure between the first substrate and the second substrate, and the bonding structure includes the first bonding via bonded to the second bonding via.
Author WEI, Chia-Yu
HUANG, Hsun-Ying
LIN, Yen-Liang
LI, Cheng-Yuan
LEE, Kuo-Cheng
CHEN, Hsin-Chi
Author_xml – fullname: WEI, Chia-Yu
– fullname: HUANG, Hsun-Ying
– fullname: LI, Cheng-Yuan
– fullname: CHEN, Hsin-Chi
– fullname: LEE, Kuo-Cheng
– fullname: LIN, Yen-Liang
BookMark eNrjYmDJy89L5WQQD3b19XT293MJdQ7xD1IIDgkCMkKDXHkYWNMSc4pTeaE0N4Oym2uIs4duakF-fGpxQWJyal5qSXxosJGBkZGxmbmxpaGjoTFxqgBN0SKG
ContentType Patent
DBID EVB
DatabaseName esp@cenet
DatabaseTitleList
Database_xml – sequence: 1
  dbid: EVB
  name: esp@cenet
  url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP
  sourceTypes: Open Access Repository
DeliveryMethod fulltext_linktorsrc
Discipline Medicine
Chemistry
Sciences
ExternalDocumentID US2022367391A1
GroupedDBID EVB
ID FETCH-epo_espacenet_US2022367391A13
IEDL.DBID EVB
IngestDate Fri Jul 19 12:49:04 EDT 2024
IsOpenAccess true
IsPeerReviewed false
IsScholarly false
Language English
LinkModel DirectLink
MergedId FETCHMERGED-epo_espacenet_US2022367391A13
Notes Application Number: US202217873835
OpenAccessLink https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20221117&DB=EPODOC&CC=US&NR=2022367391A1
ParticipantIDs epo_espacenet_US2022367391A1
PublicationCentury 2000
PublicationDate 20221117
PublicationDateYYYYMMDD 2022-11-17
PublicationDate_xml – month: 11
  year: 2022
  text: 20221117
  day: 17
PublicationDecade 2020
PublicationYear 2022
RelatedCompanies Taiwan Semiconductor Manufacturing Company, Ltd
RelatedCompanies_xml – name: Taiwan Semiconductor Manufacturing Company, Ltd
Score 3.4401228
Snippet A semiconductor structure is provided. The semiconductor structure includes a first semiconductor device. The semiconductor structure includes a first...
SourceID epo
SourceType Open Access Repository
SubjectTerms BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Title SEMICONDUCTOR STRUCTURE
URI https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20221117&DB=EPODOC&locale=&CC=US&NR=2022367391A1
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfR1dS8Mw8BhT1Ded304ZKH0rrk0_H4q4tGUIa0c_ZG8jbRMYyByu4t_3Ejbd096SHFySg_tK7gPgici4Se4J3ReV0C1RoxxEw1k3fae2TWENhepFMEmccWm9zexZBz62uTCqTuiPKo6IHFUjv7dKXq_-H7FCFVu5fq4WuPT5EhdBqG28YxPdGcPVwlEQTdMwpRqlQZlrSaZgxHGJb7yir3QgDWlZaT96H8m8lNWuUolP4XCK-JbtGXT4sgfHdNt7rQdHk82XNw433Lc-h6tcEi1NwpIWaTbIiwwHZRZdwGMcFXSs4w7zvwvNy3z3OOQSuujq82sYMMIbbhi-1diN5TXMa_yGM6dixGKsIsMb6O_DdLsffAcncioz6Qy3D93265vfo0ptqwdFiV-7f3cc
link.rule.ids 230,309,786,891,25594,76903
linkProvider European Patent Office
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1LS8NAEB5KFetN66Nq1YKSW7DJ5nkIYjcJUZuk5CG9lTw2IEgtNuLfd7Kk2lNvww7M7g7MzH67OzMA96T5N8mMSjSrvBKVqkA_iAdnUTa1QpUrZVzxXgR-oHmp8jJX5x342OTC8DqhP7w4IlpUgfZec3-9-r_EsvnfyvVD_o5Dn49uYtlCi45lhDOSLtgTy5mFdkgFSq00FoKI84imE1N6Qqy0pyMo5GDpbdLkpay2g4p7BPszlLesj6HDln3o0U3vtT4c-O2TN5Kt9a1P4DxulBYGdkqTMBrFSYREGjmncOc6CfVEnGHxt6FFGm8vh5xBF6E-G8AoI6xkkmQqpVoqRpkZpVmyTMszomRZTsYXMNwl6XI3-xZ6XuJPF9Pn4PUKDhtWk1Un6UPo1l_f7BrDa53fcK38AnIFegY
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=SEMICONDUCTOR+STRUCTURE&rft.inventor=WEI%2C+Chia-Yu&rft.inventor=HUANG%2C+Hsun-Ying&rft.inventor=LI%2C+Cheng-Yuan&rft.inventor=CHEN%2C+Hsin-Chi&rft.inventor=LEE%2C+Kuo-Cheng&rft.inventor=LIN%2C+Yen-Liang&rft.date=2022-11-17&rft.externalDBID=A1&rft.externalDocID=US2022367391A1