SEMICONDUCTOR STRUCTURE

A semiconductor structure is provided. The semiconductor structure includes a first semiconductor device. The semiconductor structure includes a first semiconductor device and a second semiconductor device. The first semiconductor device includes a first oxide layer formed below the a first substrat...

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Main Authors WEI, Chia-Yu, HUANG, Hsun-Ying, LI, Cheng-Yuan, CHEN, Hsin-Chi, LEE, Kuo-Cheng, LIN, Yen-Liang
Format Patent
LanguageEnglish
Published 17.11.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor structure is provided. The semiconductor structure includes a first semiconductor device. The semiconductor structure includes a first semiconductor device and a second semiconductor device. The first semiconductor device includes a first oxide layer formed below the a first substrate, a first bonding layer formed below the first oxide layer, and a first bonding via formed through the first bonding layer and the first oxide layer. The second semiconductor device includes a second oxide layer formed over a second substrate, a second bonding layer formed over the second oxide layer, and a second bonding via formed through the second bonding layer and the second oxide layer. The semiconductor structure also includes a bonding structure between the first substrate and the second substrate, and the bonding structure includes the first bonding via bonded to the second bonding via.
Bibliography:Application Number: US202217873835