METHOD FOR FORMING SEMICONDUCTOR DEVICE HAVING ISOLATION STRUCTURES WITH DIFFERENT THICKNESSES

A method includes forming a first trench and a second trench in a semiconductor substrate; forming a first mask over the semiconductor substrate, wherein the first mask is disposed in a first portion of the first trench and exposes the second trench and a second portion of the first trench; after fo...

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Bibliographic Details
Main Authors SYUE, Sen-Hong, CHAU, Cheng-Po, WU, Cheng-Ta, WU, Chii-Ming
Format Patent
LanguageEnglish
Published 17.11.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method includes forming a first trench and a second trench in a semiconductor substrate; forming a first mask over the semiconductor substrate, wherein the first mask is disposed in a first portion of the first trench and exposes the second trench and a second portion of the first trench; after forming the first mask, deepening the second trench and the second portion of the first trench; after deepening the second trench and the second portion of the first trench, removing the first mask; and after removing the first mask, filling a dielectric material in both the first and second trenches.
Bibliography:Application Number: US202217877824