TRANSISTOR STRUCTURE AND MANUFACTURING METHOD OF THE SAME

Present disclosure provides a transistor structure, including a substrate, a first gate extending along a longitudinal direction over the substrate, the first gate including a gate electrode, a second gate over the substrate and apart from the first gate, a source region of a first conductivity type...

Full description

Saved in:
Bibliographic Details
Main Authors LIN, TUNG-YANG, CHOU, HSUEH-LIANG
Format Patent
LanguageEnglish
Published 10.11.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:Present disclosure provides a transistor structure, including a substrate, a first gate extending along a longitudinal direction over the substrate, the first gate including a gate electrode, a second gate over the substrate and apart from the first gate, a source region of a first conductivity type in the substrate, aligning to an edge in proximity to a side of the first gate. a P-type well surrounding the source region, a drain region of the first conductivity type in the substrate, an N-type well surrounding the drain region, the second gate is entirely within a vertical projection area of the N-type well and a bottom surface of the P-type well and a bottom surface of the N-type well are substantially at a same depth from the first gate.
Bibliography:Application Number: US202217815233