TRANSISTOR CELL WITH SELF-ALIGNED GATE CONTACT

Disclosed are apparatuses including a transistor cell and methods of fabricating the transistor cell. The transistor cell may include a substrate, an active region and a gate having a gate contact in the active region. The transistor cell may further include a first portion of a spacer of the gate c...

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Bibliographic Details
Main Authors NALLAPATI, Giridhar, BAO, Junjing, ZHU, John Jianhong
Format Patent
LanguageEnglish
Published 20.10.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Disclosed are apparatuses including a transistor cell and methods of fabricating the transistor cell. The transistor cell may include a substrate, an active region and a gate having a gate contact in the active region. The transistor cell may further include a first portion of a spacer of the gate contact formed from a first material, and a second portion of the spacer of the gate contact formed from a second material.
Bibliography:Application Number: US202117235491