SEMICONDUCTOR DEVICE WITH FINE METAL LINES FOR BEOL STRUCTURE AND METHOD OF MANUFACTURING THE SAME

Provided is a semiconductor device including a a front-end-of-line (FEOL) structure and a back-end-of-line (BEOL) structure connected to the FEOL structure, wherein the FEOL structure includes at least one source/drain region and at least one gate structure, and the BEOL structure includes: a plural...

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Bibliographic Details
Main Authors BAE, Taeyong, SEO, Hoonseok
Format Patent
LanguageEnglish
Published 20.10.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Provided is a semiconductor device including a a front-end-of-line (FEOL) structure and a back-end-of-line (BEOL) structure connected to the FEOL structure, wherein the FEOL structure includes at least one source/drain region and at least one gate structure, and the BEOL structure includes: a plurality of 1st fine metal lines arranged in a row with a same pitch, each of the plurality of 1st fine metal lines having a same width; and at least one 1st wide metal line formed at a side of the plurality of 1st fine metal lines, the 1st wide metal line having a width greater than the width of the 1st fine metal line, and wherein each of the plurality of 1st fine metal lines includes a material different from a material included in the 1st wide metal line
Bibliography:Application Number: US202117354593