THYRISTOR SEMICONDUCTOR DEVICE AND CORRESPONDING MANUFACTURING METHOD

Thyristor semiconductor device comprising an anode region, a first base region and a second base region having opposite types of conductivity, and a cathode region, all superimposed along a vertical axis.

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Bibliographic Details
Main Author GUITARD, Nicolas
Format Patent
LanguageEnglish
Published 13.10.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Thyristor semiconductor device comprising an anode region, a first base region and a second base region having opposite types of conductivity, and a cathode region, all superimposed along a vertical axis.
Bibliography:Application Number: US202217851872