DEPOSITION OF BETA-GALLIUM OXIDE THIN FILMS

An epitaxial deposition process, such as atomic layer deposition, is provided for forming a thin film comprising beta-gallium oxide (β-Ga2O3) on a substrate, such as sapphire. The process involves depositing a buffer layer of metastable Ga2O3, such as α-Ga2O3, on the substrate, and then reacting a g...

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Bibliographic Details
Main Author RAFIE BORUJENY, Elham
Format Patent
LanguageEnglish
Published 13.10.2022
Subjects
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Summary:An epitaxial deposition process, such as atomic layer deposition, is provided for forming a thin film comprising beta-gallium oxide (β-Ga2O3) on a substrate, such as sapphire. The process involves depositing a buffer layer of metastable Ga2O3, such as α-Ga2O3, on the substrate, and then reacting a gallium precursor, such as TEG, with an oxygen precursor, such as oxygen plasma, to deposit a layer comprising β-Ga2O3 on the buffer layer. The Ga2O3 film formed by the process may comprise highly oriented crystalline β-Ga2O3, with negligible amounts of other Ga2O3 polymorphs.
Bibliography:Application Number: US202217708932