PIXEL STRUCTURE, IMAGE SENSOR DEVICE AND SYSTEM WITH PIXEL STRUCTURE, AND METHOD OF OPERATING THE PIXEL STRUCTURE

A photodetector in semiconductor material is provided with a first transfer gate between the photodetector and a first diffusion region in the semiconductor material, a second transfer gate between the photodetector and a second diffusion region in the semiconductor material, a capacitor connected b...

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Bibliographic Details
Main Author MEYNANTS, Guy
Format Patent
LanguageEnglish
Published 06.10.2022
Subjects
ELECTRIC COMMUNICATION TECHNIQUE
ELECTRICITY
MEASURING
MEASURING ANGLES
MEASURING AREAS
MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS
PHYSICS
PICTORIAL COMMUNICATION, e.g. TELEVISION
TESTING
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Summary:A photodetector in semiconductor material is provided with a first transfer gate between the photodetector and a first diffusion region in the semiconductor material, a second transfer gate between the photodetector and a second diffusion region in the semiconductor material, a capacitor connected between the first diffusion region and the second diffusion region, a first switch connected between the first diffusion region and a first reference voltage, and a second switch connected between the second diffusion region and a second reference voltage.
Bibliography:Application Number: US202217847573