COMPONENT WITH REDUCED ABSORPTION AND METHOD FOR PRODUCING A COMPONENT
The invention relates to a component comprising a substrate, a semiconductor element arranged on the substrate, an intermediate layer arranged at least in sections between the substrate and the semiconductor element, and a first contact structure, wherein the semiconductor element has a first semico...
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
06.10.2022
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Subjects | |
Online Access | Get full text |
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Summary: | The invention relates to a component comprising a substrate, a semiconductor element arranged on the substrate, an intermediate layer arranged at least in sections between the substrate and the semiconductor element, and a first contact structure, wherein the semiconductor element has a first semiconductor layer, a second semiconductor layer and an active zone, which is arranged in a vertical direction between the semiconductor layers and designed for generating electromagnetic radiation. The active zone has locally deactivated regions along lateral directions, which are not designed for generating electromagnetic radiation. The semiconductor element has an opening which extends through the second semiconductor layer and the active zone to the first semiconductor layer, wherein the opening is different from the deactivated regions of the active zone and is partially filled with a material of the intermediate layer. In addition, the first contact structure is designed for electrically contacting the first semiconductor layer and overlaps with the opening when viewed from above. The invention also relates to a method for producing a component of this type. |
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Bibliography: | Application Number: US202017632892 |