LOW TEMPERATURE SILICON NITRIDE/SILICON OXYNITRIDE STACK FILM WITH TUNABLE DIELECTRIC CONSTANT

Methods of forming a stack without damaging underlying layers are discussed. The encapsulation layer and dielectric layer are highly conformal, have low etch rates, and good hermeticity. These films may be used to protect chalcogen materials in PCRAM devices or any substrates sensitive to oxygen or...

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Bibliographic Details
Main Authors Trinh, Cong, Maldonado-Garcia, Maribel, Balseanu, Mihaela A
Format Patent
LanguageEnglish
Published 29.09.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Methods of forming a stack without damaging underlying layers are discussed. The encapsulation layer and dielectric layer are highly conformal, have low etch rates, and good hermeticity. These films may be used to protect chalcogen materials in PCRAM devices or any substrates sensitive to oxygen or moisture. Some embodiments utilize a two-step process comprising a first ALD process to form an encapsulation layer and oxidation process to form a dielectric layer.
Bibliography:Application Number: US202117210657