SEMICONDUCTOR DEVICE FOR INFRARED DETECTION, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FOR INFRARED DETECTION AND INFRARED DETECTOR

A semiconductor device for infrared detection comprises a stack of a first semiconductor layer, a second semiconductor layer and an optical coupling layer. The first semiconductor layer has a first type of conductivity and the second semiconductor layer has a second type of conductivity. The optical...

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Main Authors FASCHING, Gernot, MEINHARDT, Gerald, LÖFFLER, Bernhard, JONAK-AUER, Ingrid
Format Patent
LanguageEnglish
Published 29.09.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Abstract A semiconductor device for infrared detection comprises a stack of a first semiconductor layer, a second semiconductor layer and an optical coupling layer. The first semiconductor layer has a first type of conductivity and the second semiconductor layer has a second type of conductivity. The optical coupling layer comprises an optical coupler and at least a first lateral absorber region. The optical coupler is configured to deflect incident light towards the first lateral absorber region. The first lateral absorber region comprises an absorber material with a bandgap Eg in the infrared, IR.
AbstractList A semiconductor device for infrared detection comprises a stack of a first semiconductor layer, a second semiconductor layer and an optical coupling layer. The first semiconductor layer has a first type of conductivity and the second semiconductor layer has a second type of conductivity. The optical coupling layer comprises an optical coupler and at least a first lateral absorber region. The optical coupler is configured to deflect incident light towards the first lateral absorber region. The first lateral absorber region comprises an absorber material with a bandgap Eg in the infrared, IR.
Author MEINHARDT, Gerald
FASCHING, Gernot
JONAK-AUER, Ingrid
LÖFFLER, Bernhard
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Snippet A semiconductor device for infrared detection comprises a stack of a first semiconductor layer, a second semiconductor layer and an optical coupling layer. The...
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SubjectTerms BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Title SEMICONDUCTOR DEVICE FOR INFRARED DETECTION, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FOR INFRARED DETECTION AND INFRARED DETECTOR
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