SEMICONDUCTOR DEVICE FOR INFRARED DETECTION, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FOR INFRARED DETECTION AND INFRARED DETECTOR

A semiconductor device for infrared detection comprises a stack of a first semiconductor layer, a second semiconductor layer and an optical coupling layer. The first semiconductor layer has a first type of conductivity and the second semiconductor layer has a second type of conductivity. The optical...

Full description

Saved in:
Bibliographic Details
Main Authors FASCHING, Gernot, MEINHARDT, Gerald, LÖFFLER, Bernhard, JONAK-AUER, Ingrid
Format Patent
LanguageEnglish
Published 29.09.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A semiconductor device for infrared detection comprises a stack of a first semiconductor layer, a second semiconductor layer and an optical coupling layer. The first semiconductor layer has a first type of conductivity and the second semiconductor layer has a second type of conductivity. The optical coupling layer comprises an optical coupler and at least a first lateral absorber region. The optical coupler is configured to deflect incident light towards the first lateral absorber region. The first lateral absorber region comprises an absorber material with a bandgap Eg in the infrared, IR.
Bibliography:Application Number: US202017620059