Semiconductor Devices Including Backside Power Rails and Methods of Manufacture

• Main Authors: Chung, Chia-Ling, Wu, Chun-Hung, Chen, Liang-Yin, Lin, Shun-Wu, Yeo, Yee-Chia, Chang, Huicheng, Liu, Su-Hao
• Format: Patent
• Language: English
• Published: 29.09.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A method of forming a semiconductor device including performing an ion implantation on a substrate and etching the substrate and semiconductor devices formed by the same are disclosed. In an embodiment, a method includes forming a transistor on a first side of a substrate; performing an ion implantation on a second side of the substrate opposite the first side; after performing the ion implantation, etching the substrate to remove the substrate and form a first recess; and forming a dielectric layer in the first recess.