METHOD FOR PREPARING SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR STRUCTURE

• Main Authors: WAN, Qiang, XU, Penghui, XIA, Jun, LIU, Tao, LI, Sen, ZHAN, Kangshu
• Format: Patent
• Language: English
• Published: 29.09.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The present application provides a method for preparing a semiconductor structure and a semiconductor structure, relating to the technical field of semiconductors. The method for preparing a semiconductor structure includes: providing a base; forming a support layer having capacitor holes and electric contact structures; forming a first dielectric layer in the capacitor holes, the first dielectric layer surrounding first intermediate holes; forming a first electrode layer in the first intermediate holes, the first electrode layer filling the first intermediate holes; removing part of the support layer to form second intermediate holes; forming a second dielectric layer in the second intermediate holes, the first dielectric layer and the second dielectric layer forming a dielectric layer; and, forming a second electrode layer on the dielectric layer.