MEMORY DEVICE

A phase-change memory cell includes, in at least a first portion, a stack of at least one germanium layer covered by at least one layer made of a first alloy of germanium, antimony, and tellurium In a programmed state, resulting from heating a portion of the stack to a sufficient temperature, portio...

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Bibliographic Details
Main Authors NAVARRO, Gabriele, CAPPELLETTI, Paolo Giuseppe
Format Patent
LanguageEnglish
Published 22.09.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A phase-change memory cell includes, in at least a first portion, a stack of at least one germanium layer covered by at least one layer made of a first alloy of germanium, antimony, and tellurium In a programmed state, resulting from heating a portion of the stack to a sufficient temperature, portions of layers of germanium and of the first alloy form a second alloy made up of germanium, antimony, and tellurium, where the second alloy has a higher germanium concentration than the first alloy.
Bibliography:Application Number: US202217833415