SEMICONDUCTOR STRUCTURE WITH MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

Semiconductor structures and methods for manufacturing the same are provided. The method includes forming a bottom electrode layer over a substrate and forming a pinned layer over the bottom electrode layer. The method also includes forming a tunnel barrier layer over the pinned layer and forming a...

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Main Authors HUANG, Chih-Fan, HUANG, Chien-Hua, YANG, Chang-Lin, CHEN, Dian-Hau, HUANG, Chen-Chiu, CHIU, Chih-Pin
Format Patent
LanguageEnglish
Published 22.09.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Semiconductor structures and methods for manufacturing the same are provided. The method includes forming a bottom electrode layer over a substrate and forming a pinned layer over the bottom electrode layer. The method also includes forming a tunnel barrier layer over the pinned layer and forming a free layer over the tunnel barrier layer. The method also includes patterning the free layer, the tunnel barrier layer, and the pinned layer to form a magnetic tunnel junction (MTJ) stack structure and patterning the bottom electrode layer to form a bottom electrode structure under the MTJ stack structure. In addition, patterning the free layer includes using a first etching gas, and patterning the bottom electrode layer includes using a second etching gas, which is different from the first etching gas.
Bibliography:Application Number: US202117205213