SEMICONDUCTOR APPARATUS

A semiconductor apparatus having a silicon substrate layer at least portion of which is doped with dopants of a conductivity type; and at least one insulator layer formed above the silicon substrate layer, wherein the at least one insulator layer and the dopants of the silicon substrate layer have o...

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Bibliographic Details
Main Authors TUOVINEN, Esa, RANTAKARI, Pekka, VILJANEN, Heikki, VÄHÄ-HEIKKILÄ, Tauno
Format Patent
LanguageEnglish
Published 22.09.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor apparatus having a silicon substrate layer at least portion of which is doped with dopants of a conductivity type; and at least one insulator layer formed above the silicon substrate layer, wherein the at least one insulator layer and the dopants of the silicon substrate layer have opposite electric charges.
Bibliography:Application Number: US202217835009