FABRICATION METHOD OF SEMICONDUCTOR DEVICE AND TEST METHOD OF SEMICONDUCTOR DEVICE

Provided is a fabrication method of a semiconductor device comprising an element forming process of forming a semiconductor element in a semiconductor substrate and forming a metal electrode above the semiconductor substrate; a plating process of plating the metal electrode; an annealing process of...

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Bibliographic Details
Main Authors YOSHIDA, Soichi, SHOJI, Atsushi
Format Patent
LanguageEnglish
Published 22.09.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Provided is a fabrication method of a semiconductor device comprising an element forming process of forming a semiconductor element in a semiconductor substrate and forming a metal electrode above the semiconductor substrate; a plating process of plating the metal electrode; an annealing process of annealing the semiconductor substrate; a voltage applying process of applying a voltage corresponding to a thickness of the gate insulating film to the gate insulating film after the annealing process; and a judging process of measuring a threshold voltage of the semiconductor element after the voltage applying process, and judging a quality of the semiconductor element based on a measurement result.
Bibliography:Application Number: US202217581966