METHOD FOR REMOVING RESISTOR LAYER, AND METHOD OF MANUFACTURING SEMICONDUCTOR
A method for removing a resist layer including the following steps is provided. A patterned resist layer on a material layer is formed. A stripping solution is applied to the patterned resist layer to dissolve the patterned resist layer without dissolving the material layer, wherein the stripping so...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
22.09.2022
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Subjects | |
Online Access | Get full text |
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Summary: | A method for removing a resist layer including the following steps is provided. A patterned resist layer on a material layer is formed. A stripping solution is applied to the patterned resist layer to dissolve the patterned resist layer without dissolving the material layer, wherein the stripping solution comprises a non-dimethyl sulfoxide solvent and an alkaline compound, the non-dimethyl sulfoxide solvent comprises an aprotic solvent and a protic solvent. |
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Bibliography: | Application Number: US202217829366 |