SEMICONDUCTOR LIGHT-EMITTING DEVICE AND OPTICAL COUPLING DEVICE

• Main Authors: Isomoto, Kenji, Sugawara, Hideto, Tanaka, Akira, Kondo, Katsufumi, Iwamoto, Masanobu, Ootsuka, Hiroaki
• Format: Patent
• Language: English
• Published: 15.09.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A semiconductor light-emitting device includes a substrate having a first energy bandgap, a first semiconductor layers on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer. The active layer includes a quantum well layer, and a first barrier layer between the first semiconductor layer and the quantum well layer. The first semiconductor layer has a second energy bandgap wider than the first energy bandgap. The quantum well layer has a third energy bandgap narrower than the first and second energy bandgaps. The second semiconductor layer has a fourth energy bandgap wider than the third energy bandgap. The substrate has a refractive index greater than a refractive index of the first semiconductor layer. The refractive index of the first semiconductor layer is not less than a refractive index of the first barrier layer.