MEMORY DEVICE

According to one embodiment, a memory device includes: a memory cell including a memory element and a switching element; and a circuit that applies a first write pulse having a first polarity to the memory cell at the time of writing first data in the memory cell and applies a second write pulse hav...

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Bibliographic Details
Main Author MATSUSHITA, Naoki
Format Patent
LanguageEnglish
Published 15.09.2022
Subjects
ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:According to one embodiment, a memory device includes: a memory cell including a memory element and a switching element; and a circuit that applies a first write pulse having a first polarity to the memory cell at the time of writing first data in the memory cell and applies a second write pulse having a second polarity different from the first polarity to the memory cell at the time of writing second data in the memory cell. The switching element has polarity dependence according to the first and second polarities.
Bibliography:Application Number: US202117470867