SINGLE CHIP MULTI BAND LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME

A light emitting diode according to an exemplary embodiment of the present disclosure includes an n-type nitride semiconductor layer, a V-pit generation layer, a sub-emission layer, an active layer, and a p-type nitride semiconductor layer. The sub-emission layer is disposed on the n-type nitride se...

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Bibliographic Details
Main Authors KANG, Ji Hun, MIN, Dae Hong, BAEK, Yong Hyun
Format Patent
LanguageEnglish
Published 08.09.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A light emitting diode according to an exemplary embodiment of the present disclosure includes an n-type nitride semiconductor layer, a V-pit generation layer, a sub-emission layer, an active layer, and a p-type nitride semiconductor layer. The sub-emission layer is disposed on the n-type nitride semiconductor layer and having V-pits. The active layer is disposed on the sub-emission layer and having a first well region formed along a flat surface of the V-pit generation layer and a second well region formed in the V-pit of the V-pit generation layer. The p-type nitride semiconductor layer is disposed on the active layer. An energy band gap of the sub-emission layer is wider than that of the first well region of the active layer. The light emitting diode emits light having at least three different peak wavelengths at a single chip level.
Bibliography:Application Number: US202217682614