SEMICONDUCTOR DIE WITH A POWER DEVICE AND METHOD OF MANUFACTURING THE SAME

The disclosure relates to a semiconductor die with a transistor device, which has a channel region formed in a semiconductor body, a gate region aside the channel region, for controlling a channel formation, a drift region formed in the semiconductor body, and a field electrode in a field electrode...

Full description

Saved in:
Bibliographic Details
Main Authors Tegen, Stefan, Kubasch, Christoph, Ferrara, Alessandro, Kroenke, Matthias, Finney, Adrian, Weis, Rolf
Format Patent
LanguageEnglish
Published 08.09.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:The disclosure relates to a semiconductor die with a transistor device, which has a channel region formed in a semiconductor body, a gate region aside the channel region, for controlling a channel formation, a drift region formed in the semiconductor body, and a field electrode in a field electrode trench, which extends from a frontside of the semiconductor body vertically into the drift region, wherein an insulating layer is formed on the frontside of the semiconductor body and a frontside metallization is formed on the insulating layer, and wherein a capacitor electrode is formed in the insulating layer, which is conductively connected to at least a portion of the field electrode.
Bibliography:Application Number: US202217682113